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| BCR08AM-14A Triac Low Power Use REJ03G1200-0200 Rev.2.00 Nov 30, 2007 Features * * * * IT (RMS) : 0.8 A VDRM : 700 V IFGT I, IRGT I, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Washing machine, electric fan, air cleaner, other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 700 840 Unit V V REJ03G1200-0200 Page 1 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-14A Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Ratings 0.8 8 0.26 1 0.1 6 0.5 - 40 to +125 - 40 to +125 0.23 Unit A A A2s W W V A C C g Conditions Commercial frequency, sine full wave 360 conduction, Tc = 67C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger current Note2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.1 -- 0.5 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 2.0 5 5 5 -- 50 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 1.2 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Main Current Main Voltage (dv/dt)c (di/dt)c Time Time VD Time Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 0.4 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1200-0200 Page 2 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-14A Performance Curves Maximum On-State Characteristics 101 7 5 On-State Current (A) Rated Surge On-State Current 10 Tc = 25C Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 3 2 100 7 5 3 2 10-1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 23 5 7 101 23 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 102 2 3 5 7 103 2 3 5 7104 2 3 5 7105 3 Transient Thermal Impedance (C/W) 3 2 101 Gate Voltage (V) 100 (%) Gate Characteristics Typical Example VGM = 6V PGM = 1W VGT PG(AV) = 0.1W IGM = 0.5A IFGT I, IRGT I, IRGT III 100 7 5 3 2 10-1 7 5 3 VGD = 0.1V 3 5 7 101 2 3 5 7 102 23 5 7103 Gate Current (mA) 100 (%) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Typical Example Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 7 5 3 2 2 Junction to ambient 102 7 5 3 2 101 7 5 3 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Gate Trigger Voltage (Tj = tC) Gate Trigger Voltage (Tj = 25C) Junction to case REJ03G1200-0200 Page 3 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-14A Maximum On-State Power Dissipation 2.0 160 140 Allowable Case Temperature vs. RMS On-State Current Curves apply regardless of conduction angle On-State Power Dissipation (W) 1.8 Case Temperature (C) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 360 Conduction Resistive, inductive loads 0.8 1.0 1.2 1.4 120 100 80 60 40 20 0 360 Conduction Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 140 Curves apply regardless of conduction angle Natural Convection No Fins 100 (%) Repetitive Peak Off-State Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature 120 100 80 60 40 20 0 360 Conduction Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) Repetitive Peak Off-State Current (Tj = 25C) Ambient Temperature (C) (C) Holding Current vs. Junction Temperature. Laching Current vs. Junction Temperature 102 7 5 3 2 101 7 5 3 2 100 7++ 5 T2 , G 3 Typical 2 Example 10-1 -40 0 Distribution + T2 , G- Typical Example 100 (%) 103 7 5 3 Typical Example Holding Current (Tj = tC) Holding Current (Tj = 25C) 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature Laching Current (mA) - T2 , G- Typical Example 40 80 120 160 (C) Junction Temperature (C) REJ03G1200-0200 Page 4 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-14A Breakover Voltage vs. Junction Temperature 100 (%) 100 (%) Breakover Voltage vs. Rate Of Rise Of Off-State Voltage 160 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate Of Rise Of Off-State Voltage (V/s) I Quadrant III Quadrant Typical Example Tj = 125C 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) Commutation Characteristics 100 (%) Critical Rate Of Rise Of Off-State Commutating Voltage (V/s) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 3 Gate Trigger Current (tw) Gate Trigger Current (DC) 101 7 Typical Example 5 3 2 100 7 5 3 2 10-1 10-1 2 Minimum Characteristics Value Conditions VD = 200V IT = 1A = 500s Tj = 125C III Quadrant Typical Example IRGT III IRGT III 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 IFGT I IRGT I I Quadrant 3 5 7 100 2 3 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 6V V A RG 6V V A RG Test Procedure I 6 Test Procedure II 6V V A RG Test Procedure III REJ03G1200-0200 Page 5 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-14A Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code MASS[Typ.] 0.23g Unit: mm 5.0Max 4.4 1.25 1.25 Circumscribed circle 0.7 1.1 11.5Min 5.0Max Order Code Lead form Straight type Lead form Form A8 Standard packing Vinyl sack Vinyl sack Taping Quantity 500 500 2000 Standard order code Type name Type name - Lead forming code Type name - TB Standard order code example BCR08AM-14A BCR08AM-14A-A6 BCR08AM-14A-TB Note : Please confirm the specification about the shipping in detail. REJ03G1200-0200 Page 6 of 6 Rev.2.00 Nov 30, 2007 3.6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2 |
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